[超导国家重点实验室学术报告]Electronic state control in layered quantum materials

The multifunctional behaviors of quantum materials are driven by the intricate interplay between charge, orbital and spin degrees of freedom. Advances in modern field-effect devices allow for unprecedented control of these degrees of freedom, revealing a plethora of exotic physical phenomena such as superconductivity and long-range magnetic order. In this talk, I will provide an overview of our recent progress in controlling the emerging physical phenomena in layered quantum devices and how they offer new insights to the underlying physics. First, I will discuss the observation of a spontaneous anomalous Hall effect, a trademark of time-reversal symmetry breaking, in a doped layered polar semiconductor. Notably, the magnitude of anomalous Hall conductivity can be enhanced by tuning the carrier density, which sheds new light on the interplay of magnetic and ferroelectric-like responses [1]. Next, I will present recent results on the electric field control at the interfaces of ionic gated tellurium thin flake devices, demonstrating a fourfold increase in the Rashba spin-orbit coupling coefficient.

超导实验室学术报告1

超导实验室学术报告
超导实验室学术报告